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Characteristic electrical curves of GaN HEMT devices from Infineon andTransphorm are compared at different X-ray radiation dose. It is shown that thedevice with pGaN gate is more robust having a stable threshold voltage (Vth).The Vth of device with MIS gate shifts towards negative direction firstly andshifts to forward direction then. A qualitative analysis is performed in thepaper. Such dynamic phenomenon is caused by releasing and trapping effects ofradiation induced charges both in the dielectric layer and the interface of thedevice. It is summarized that pGaN gate based GaN HEMT is a promising solutionfor further space use of electric source

Effect of X-Ray Irradiation on Threshold Voltage of AlGaN/GaN HEMTs with pGaN and MIS Gate