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Triple junction (InGaP/GaAs/Ge) and single junction (SJ) solar cells wereirradiated with electrons, protons and neutrons. The degradation of remainingfactors was analyzed as function of the induced Displacement Damage Dose (DDD)calculated by means of the SR-NIEL (Screened Relativistic Non Ionizing\ EnergyLoss) approach. In particular, the aim of this work is to analyze the variationof the solar cells remaining factors due to neutron irradiation with respect tothose previously obtained with electrons and protons. The current analysisconfirms that the degradation of the $P_{max}$ electrical parameter is relatedby means of the usual semi-empirical expression to the displacement dose,independently of type of the incoming particle. $I_{sc}$ and $V_{oc}$parameters were also measured as a function of the displacement damage dose.Furthermore, a DLTS analysis was carried out on diodes - with the sameepitaxial structure as the middle sub-cell - irradiated with neutrons.

NIEL Dose Analysis on triple and single junction InGaP/GaAs/Ge solar cells irradiated with electrons, protons and neutrons