English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Open

We use the modified Becke-Johnson exchange potential (mBJ) with thespin-orbit coupling effect (SOC) to study effects of biaxial strain and localconstant potential on electronic structure of monolayer SnSe. Our results showthe fundamental band gap size can be tuned via biaxial strain. Compressivestrain (tensile strain) can narrow (enlarge) band gap, and compressive straincauses the transition from quasi-direct to indirect band gap. Moreover,considering that any tuning of electronic structure is realized by changing theperiodic potential distribution in the crystalline, we directly add constantpotential (CP) to muffin-tin spheres. The results demonstrate that positive andnegative CPs can narrow and enlarge band gap, respectively. At CP of 0.9 Ry,semiconductor-metal transition appears, and interestingly a new type of nearlylinear dispersions occur at band edge. Our work is good for inspiring moreexperimental and further theoretical research works.

Effects of biaxial strain and local constant potential on electronic structure of monolayer SnSe