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The non-homogeneity in the critical temperature $T_{c}$ of an MicrowaveKinetic Inductance Detector (MKID) could be caused by non-uniformity in thedeposition process of the thin superconducting film. This produces low percentyield and frequency collision in the readout of the MKIDs. Here, we show thehomogeneity that offers Atomic Layer Deposition (ALD). We report an improvementof up to a factor of 50 in the fractional variation of the $T_{c}$ for TiNMKIDs fabricated with Atomic Layer Deposition in comparison with MKIDsfabricated with sputtering. We measured the critical temperature of 48resonators. We extracted the $T_{c}$ of the MKIDs by fitting the fractionalresonance frequency to the complex conductivity of their resonators. Weobserved uniformity on the critical temperature for MKIDs belonging to the samefabrication process, with a maximum change in the $T_{c}$ of 60 mK for MKIDsfabricated on different wafers.

On the Homogeneity of TiN Kinetic Inductance Detectors Produced through Atomic Layer Deposition