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Writing magnetic bits by spin-orbit torques (SOTs) arising from spin Halleffect creates new possibilities for ultrafast and low-power magnetoresistiverandom access memory (MRAM). For perpendicular MRAM, an extra in-plane field isrequired to break the symmetry for the deterministic SOT writing of theperpendicular storage layer. Although schemes have been demonstrated inexternal-field-free SOT switching of a perpendicular layer, practicallyintegrating them with perpendicular MTJs still appears to be challenging. Here,we present experimental demonstration of spin-orbit torques (SOTs) switching aperpendicular magnetic tunnel junction (MTJ) device without applying anexternal magnetic field. An Ir layer is used to serve dual-purpose of bothinjecting the pure spin current via spin Hall effect and mediating an in-planeexchange field to the perpendicular free layer of the MTJ. Robust field-freeSOT switching with pulsed write path current is demonstrated for various MTJsizes ranging from 50 nm to 500 nm. The effect of MTJ size and pulse width onthe critical switching current is studied. Combined micromagnetic simulationsare carried out to provide in-depth analysis of the switching dynamics as wellas the thermal effect on the switching.

Iridium Enabled Field-free Spin-orbit Torque Switching of Perpendicular Magnetic Tunnel Junction Device