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We show the merits of plasma enhanced atomic layer deposition (PEALD) ofcatalytic substrate for chemical vapour deposition (CVD) graphene growth. Thehigh quality multilayer graphene (MLG) on molybdenum carbide ($MoC_{x}$) thinfilm exhibits excellent uniformity and layer homogeneity over a large area.Moreover, we demonstrate how to achieve control of graphene layers thicknessand properties, by varying the specific catalytic film chemical and physicalproperties. The control of growth is not digital, but is broad ranged from fewlayer graphene to a graphitic film of $\sim{75}$ graphene layers grown on therespective ALD catalytic substrates. Characterisation of the MLG has beenperformed using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS),spectral ellipsometry (SE), and scanning low-energy electron microscopy(SLEEM). By varying MLG thickness in a uniform homogeneous way, we can tailorthe desired MLG properties for different application needs. Furthermore, thePEALD process can be readily adapted to high volume manufacturing processes,and combined with existing production lines.

Control of Graphene Layer Thickness Grown on Plasma Enhanced Atomic Layer Deposition of Molybdenum Carbide