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As modern computing gets continuously pushed up against the von NeumannBottleneck -- limiting the ultimate speeds for data transfer and computation --new computing methods are needed in order to bypass this issue and keep ourcomputer's evolution moving forward, such as hybrid computing with an opticalco-processor, all-optical computing, or photonic neuromorphic computing. In anyof these protocols, we require an optical memory: either amultilevel/accumulator memory, or a computational memory. Here, we propose anddemonstrate a 2-dimensional 4-bit fully optical non-volatile memory usingGe2Sb2Te5 (GST) phase change materials, with encoding via a 1550 nm laser.Using the telecom-band laser, we are able to reach deeper into the material dueto the low-loss nature of GST at this wavelength range, hence increasing thenumber of optical write/read levels compared to previous demonstrations, whilesimultaneously staying within acceptable read/write energies. We verify ourdesign and experimental results via rigorous numerical simulations based onfinite element and nucleation theory, and we successfully write and read astring of characters using direct hexadecimal encoding.

Phase change dynamics and 2-dimensional 4-bit memory in Ge2Sb2Te5 via telecom-band encoding