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Disordered topological insulator (TI) films have gained intense interest bybenefiting from both the TIs exotic transport properties and the advantage ofmass production by sputtering. Here, we report on the clear evidence ofspin-charge conversion (SCC) in amorphous Gd-alloyed BixSe1-x (BSG)/CoFeBbilayers fabricated by sputtering, which could be related to the amorphous TIsurface states. Two methods have been employed to study SCC in BSG/CoFeB(5 nm)bilayers with different BSG thicknesses. Firstly, spin pumping is used togenerate a spin current in CoFeB and to detect SCC by inverse Edelstein effect.The maximum SCC efficiency (SCE) is measured as large as 0.035 nm in a 6 nmthick BSG sample, which shows a strong decay when tBSG increases due to theincrease of BSG surface roughness. The second method is the THz time-domainspectroscopy, which reveals a small tBSG dependence of SCE, validating theoccurrence of a pure interface state related SCC. Furthermore, ourangle-resolved photoemission spectroscopy data show dispersive two-dimensionalsurface states that cross the bulk gap until to the Fermi level, strengtheningthe possibility of SCC due to the amorphous TI states. Our studies provide anew experimental direction towards the search for topological systems in theamorphous solids.

Room Temperature Spin to Charge Conversion in Amorphous Topological Insulating Gd-Alloyed BixSe1-x/CoFeB Bilayers