English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Advancement of optoelectronic and high-power devices is tied to thedevelopment of wide band gap materials with excellent transport properties.However, bipolar doping (n-type and p-type doping) and realizing high carrierdensity while maintaining good mobility have been big challenges in wide bandgap materials. Here P-type and n-type conductivity was introduced inbeta-Ga2O3, an ultra-wide band gap oxide, by controlling hydrogen incorporationin the lattice without further doping. Hydrogen induced a 9-order of magnitudeincrease of n-type conductivity with donor ionization energy of 20 meV andresistivity of 10-4 Ohm.cm. The conductivity was switched to p-type withacceptor ionization energy of 42 meV by altering hydrogen incorporation in thelattice. Density functional theory calculations were used to examine hydrogenlocation in the Ga2O3 lattice and identified a new donor type as the source ofthis remarkable n-type conductivity. Positron annihilation spectroscopyconfirmed this finding and the interpretation of the results. This workillustrates a new approach that allows a tunable and reversible way ofmodifying the conductivity of semiconductors and it is expected to haveprofound implications on semiconductor field. At the same time it demonstratesfor the first time p-type and remarkable n-type conductivity in Ga2O3 whichshould usher in the development of Ga2O3 devices and advance optoelectronicsand high-power devices

Chemical manipulation of hydrogen induced high p-type and n-type conductivity in Ga2O3