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We demonstrate an ionically gated planar PS-PV solar cell with ultra-thickfullerene ETL with a porous CNT electron collector on top of it. Perovskitephotovoltaic devices usually have undoped electron transport layers, usuallythin like C60 due to its high resistance. Metallic low work function cathodesare extremely unstable in PS-PV due to reaction with halogens I-/Br-, and itwould be desirable to have stable carbon cathodes on top of thick lowresistance ETL for enhancing the stability of PS-PVs. We show that gating suchtop CNT cathode in ionic liquid, as part of a supercapacitor charged by Vgtunes the Fermi level of CNT by EDL charging, and causes lowering of a barrierat of C60/C70 ETL. Moreover, at higher gating voltage ions further propagatesinto fullerene by electrochemical n-doping, which increases dramatically PVperformance by raising mostly two parameters: Isc and FF, resulting in PCEefficiency raised from 3 % to 11 %. N-doping of ETL strongly enhances chargecollection by ETL and CNT raising Isc and lowering series resistance and thusincreasing strongly PCE. Surprisingly Voc is not sensitive in PS-PV to externalVg gating, on the contrary, to strongly enhanced Voc in ionically gated organicPV, where it is the main gating effect. This insensitivity of Voc to loweringof the work function of Vg gated CNT electrode is a clear indication that Vocin PS-PV is determined by inner p-i-n junction formation in PS itself, viaaccumulation of its intrinsic mobile ionic species halogens and cations andtheir vacancies.

Ionically gated perovskite solar cell with tunable carbon nanotube interface at thick fullerene electron transporting layer: comparison to gated OPV