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In the supporting information file for article Dynamics of Defects in van derWaals Epitaxy of Bismuth Telluride Topological Insulators(J. Phys. Chem. C2019, 123, 24818-24825, doi: 10.1021/acs.jpcc.9b05377), several topics on X-raydiffraction analysis of thin films were developed or revisited. A simpleequation to determine lateral lattice coherence lengths in thin films stands asthe main development (section S4 - Lateral lattice coherence length in thinfilms), while X-ray dynamical diffraction simulation in monochromator crystalsstands as an interesting overview on how the ratio between $\pi$ and $\sigma$polarization components is affected by whether diffraction takes place underkinematical or dynamical regime (section S3 - Polarization factor).

Lateral lattice coherence lengths in thin films of bismuth telluride  topological insulators, with overview on polarization factors for X-ray  dynamical diffraction in monochromator crystals