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The search for materials to support the Quantum Anomalous Hall Effect (QAHE)have recently centered on intrinsic magnetic topological insulators (MTIs)including MnBi$_2$Te$_4$ or heterostructures made up of MnBi$_2$Te$_4$ andBi$_2$Te$_3$. While MnBi$_2$Te$_4$ is itself a MTI, most recent ARPESexperiments indicate that the surface states on this material lack the mass gapthat is expected from the magnetism-induced time-reversal symmetry breaking(TRSB), with the absence of this mass gap likely due to surface magneticdisorder. Here, utilizing small-spot ARPES scanned across the surfaces ofMnBi$_4$Te$_7$ and MnBi$_6$Te$_{10}$, we show the presence of large mass gaps(~ 100 meV scale) on both of these materials when the MnBi$_2$Te$_4$ surfacesare buried below one layer of Bi$_2$Te$_3$ that apparently protects themagnetic order, but not when the MnBi$_2$Te$_4$ surfaces are exposed at thesurface or are buried below two Bi$_2$Te$_3$ layers. This makes bothMnBi$_4$Te$_7$ and MnBi$_6$Te$_{10}$ excellent candidates for supporting theQAHE, especially if bulk devices can be fabricated with a single continuousBi$_2$Te$_3$ layer at the surface.

Strongly Gapped Topological Surface States on Protected Surfaces of Antiferromagnetic MnBi$_4$Te$_7$ and MnBi$_6$Te$_{10}$