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This work proposes new chemical and mechanical materials and techniques forIII-V semiconductor NW/silicone membrane formation and optoelectronic devicefabrication. Molecular beam epitaxy (MBE)-synthesized n-, p- and i-GaP NWs wereencapsulated by introduced G-coating method into synthesizedpolydimethylsiloxane-graft-polystyrene and released from the Si growthsubstrate. The fabricated membranes were contacted with different materialsincluding single-walled carbon nanotubes or ferrocenyl-containingpolymethylhydrosiloxane with and without multi-walled carbon nanotubes doping.The electrical connection of the fabricated membranes was verified by electronbeam induced current (EBIC) spectroscopy. The developed methods and materialscan be applied for fabrication of high quality flexible inorganicoptoelectronic devices.

Modified silicone rubbers for fabrication and contacting of flexible  suspended membranes of n-/p-GaP nanowires with single-walled carbon nanotube  transparent contact