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We report on the design and demonstration of${\beta}-(Al_{0.18}Ga_{0.82})_2O_3/Ga_2O_3$ modulation doped heterostructuresto achieve high sheet charge density. The use of a thin spacer layer betweenthe Si delta-doping and heterojunction interface was investigated in${\beta}-(Al_{0.18}Ga_{0.82})_2O_3/Ga_2O_3$ modulation doped structures. Wefind that that this strategy enables higher 2DEG sheet charge density up to6.1x10^12 cm^2 with mobility of 147 cm^2/Vs. The presence of a degenerate 2DEGchannel was confirmed by the measurement of low temperature effective mobilityof 378 cm^2/V-s and a lack of carrier freeze out from low temperaturecapacitance voltage measurements. The electron density of 6.1x10^12 cm^2 is thehighest reported sheet charge density obtained without parallel conductionchannels in an $(Al_{0.18}Ga_{0.82})_2O_3/Ga_2O_3$ heterostructure system.

High electron density ${\beta}-(Al_{0.18}Ga_{0.82})_2O_3/Ga_2O_3$ modulation doping using ultra-thin (1 nm) spacer layer