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Detailed structural and electrical properties of ultra-nano-crystallinediamond (UNCD) films grown in H$_\text{2}$/CH$_\text{4}$/N$_\text{2}$ plasmawere systematically studied as a function of deposition temperature ($T_d$) andnitrogen content ($\%$ N$_2$) to thoroughly evaluate their effects onconductivity. $T_d$ was scanned from 1000 to 1300 K for N$_2$ fixed at 0, 5, 10and 20 $\%$. It was found that even the films grown in the synthetic gasmixture with no nitrogen could be made as conductive as 1$-$10$^{-2}$ $\Omega$cm with overall resistivity of all the films tuned over 4 orders of magnitudethrough varying growth parameters. On a set of 27 samples, Raman spectroscopyand scanning electron microscopy show a progressive and highly reproduciblefilm material phase transformation, from ultra-nano-crystalline diamond tonano-crystalline graphite as deposition temperature increases. The rate of thistransformation is heavily dependent on N$_2$ content. Addition of nitrogengreatly increases the amount of $sp^2$ bonded carbon in the films thusenhancing the physical connectivity in the GB network that have high electronicdensity of states. However, addition of nitrogen greatly slows downcrystallization of $sp^2$ phase in the GBs. Therefore, proper balance betweenGB connectivity and crystallinity is the key in conductivity engineering of(N)UNCD.

Revisiting Effects of Nitrogen Incorporation and Graphitization on Conductivity of Ultra-nano-crystalline Diamond Films