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We report the growth of highly c-axis oriented topological insulator (TI)BiSbTe1.5Se1.5 (BSTS) thin films by pulsed laser deposition (PLD) technique.The various growth parameters such as substrate temperature, Argon pressure inthe deposition chamber and target to substrate distance are tuned to obtain theoptimized conditions essential for stoichiometric and bulk insulating TI thinfilms. These films are highly c-axis oriented and exhibit all the four Ramanmodes characteristic to the R-3m space group. The quality of the deposited thinfilms is investigated using X-ray diffraction for crystallinity, Ramanspectroscopy for lattice dynamics, morphological studies using scanningelectron microscope and compositional analysis using Energy dispersive X-rayspectroscopy. Resistance vs temperature measurements confirm bulk insulatingnature of the prepared thin films and magnetoresistance data exhibits thephenomena of weak antilocalization with a large phase coherence length.

Pulsed laser deposition of highly c-axis oriented thin films of BSTS topological insulator