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The search for high-quality transition metal dichalcogenides mono- andmulti-layers grown on large areas is still a very active field of investigationnowadays. Here, we use molecular beam epitaxy to grow 15$\times$15 mm largeWSe$_2$ on mica in the van der Waals regime. By screening one-step growthconditions, we find that very high temperature ($>$900$^{\circ}$C) and very lowdeposition rate ($<$0.015 nm/min) are necessary to obtain high quality WSe$_2$films. The domain size can be larger than 1 $\mu$m and the in-plane rotationalmisorientation less than $\pm$0.5$^{\circ}$. The WSe$_2$ monolayer is alsorobust against air exposure, can be easily transferred over 1 cm$^2$ onSiN/SiO$_2$ and exhibits strong photoluminescence signal. Moreover, bycombining grazing incidence x-ray diffraction and transmission electronmicroscopy, we could detect the presence of few misoriented grains. Atwo-dimensional model based on atomic coincidences between the WSe$_2$ and micacrystals allows us to explain the formation of these misoriented grains andgives suggestion to remove them and further improve the crystalline quality ofWSe$_2$.

New approach for the molecular beam epitaxy growth of scalable single-crystalline WSe$_2$ monolayers