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Perovskite semiconductors have demonstrated outstanding external luminescencequantum yields, enabling high power conversion efficiencies (PCE). However, theprecise conditions to advance to an efficiency regime above monocrystallinesilicon cells are not well understood. Here, we establish a simulation modelthat well describes efficient p-i-n type perovskite solar cells and a range ofdifferent experiments. We then study important device and material parametersand we find that an efficiency regime of 30% can be unlocked by optimizing thebuilt-in potential across the perovskite layer by using either highly doped(10^19 cm-3), thick transport layers (TLs) or ultrathin undoped TLs, e.g.self-assembled monolayers. Importantly, we only consider parameters that havebeen already demonstrated in recent literature, that is a bulk lifetime of 10us, interfacial recombination velocities of 10 cm/s, a perovskite bandgap of1.5 eV and an EQE of 95%. A maximum efficiency of 31% is predicted for abandgap of 1.4 eV. Finally, we demonstrate that the relatively high mobile iondensity does not represent a significant barrier to reach this efficiencyregime. Thus, the results of this paper promise continuous PCE improvementsuntil perovskites may become the most efficient single-junction solar celltechnology in the near future.

Pathways towards 30% efficient single-junction perovskite solar cells and the role of mobile ions