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In this paper, we report enhanced breakdown characteristics ofPt/BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes compared toPt/Al0.58Ga0.42N Schottky diodes. BaTiO3, an extreme dielectric constantmaterial, has been used, in this study, as dielectric material under the anodeto significantly reduce the peak electric field at the anode edge of theheterojunction diode such that the observed average breakdown field was higherthan 8 MV/cm, achieved for devices with anode to cathode spacing less than 0.2microns. Control Schottky anode devices (Pt/Al0.58Ga0.42N) fabricated on thesame sample displayed an average breakdown field around 4 MV/cm for deviceswith similar dimensions. While both breakdown fields are significantly higherthan those exhibited by incumbent technologies such as GaN-based devices,BaTiO3 can enable more effective utilization of the higher breakdown fieldsavailable in ultra-wide bandgap materials by proper electric field management.This demonstration thus lays the groundwork needed to realize ultra-scaledlateral devices with significantly improved breakdown characteristics.

Lateral Heterojunction BaTiO3/AlGaN Diodes with >8MV/cm Breakdown Field