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The mechanisms causing the reduction in lattice thermal conductivity inhighly P- and B-doped Si are looked into in detail. Scattering rates of phononsby point defects, as well as by electrons, are calculated from firstprinciples. Lattice thermal conductivities are calculated considering thesescattering mechanisms both individually and together. It is found that at lowcarrier concentrations and temperatures phonon scattering by electrons isdominant and can reproduce the experimental thermal conductivity reduction.However, at higher doping concentrations the scattering rates of phonons bypoint defects dominate the ones by electrons except for the lowest phononfrequencies. Consequently, phonon scattering by point defects contributessubstantially to the thermal conductivity reduction in Si at defectconcentrations above $10^{19}$ cm$^{-3}$ even at room temperature. Only when,phonon scattering by both point defects and electrons are taken into account,excellent agreement is obtained with the experimental values at alltemperatures.

Combined treatment of phonon scattering by electrons and point defects explains the thermal conductivity reduction in highly-doped Si