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Storage Class Memory (SCM) is a class of memory technology which has recentlybecome viable for use. Their namearises from the fact that they exhibitnon-volatility of data, similar to secondary storage while also havinglatencies comparable toprimary memory and byte-addressibility. In this area,Phase Change Memory (PCM), Spin-Transfer-Torque Random Access Memory(STT-RAM),and Resistive RAM (ReRAM) have emerged as the major contenders for commercialand industrial use. In this paper, wedescribe how these memory types function,while highlighting the problems of endurance and performance that these memorytypesface. We also discuss the future possibilities of Multi-Level Cells(MLCs), as well as how SCM can be used to construct accelerators.

Storage Class Memory: Principles, Problems, and Possibilities