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Schemes aimed at transferring individual electrons in semiconductor devicesand detecting possible transfer errors have increasing importance formetrological applications. We study the coupling of a superconductingJosephson-junction-based charge detector to an electron island defined byfield-effect in silicon. The flexibility of our device allows one to tune thecoupling using the detector as an additional gate electrode. We study thereliability of the electron sensor in different device configurations and thesuitability of various operation modes for error detection in electron pumpingexperiments. As a result, we obtain a charge detection bandwidth of 5.87 kHzwith unity signal to noise ratio at 300 mK bath temperature.

Superconducting charge sensor coupled to an electron layer in silicon