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Harnessing low energy photons is of paramount importance for multi-junctionhigh efficiency solar cells as well as for thermo-photovoltaic applications.However, semiconductor absorbers with bandgap lower than 0.8 eV have beenlimited to III-V (InGaAs) or IV (Ge) semiconductors that are characterized byhigh manufacturing costs and complicated lattice matching requirements in theirgrowth and integration with the higher bandgap cells. Here, we have developedsolution processed low bandgap photovoltaic devices based on PbS colloidalquantum dots (CQDs) with a bandgap of 0.7 eV suited for boththermo-photovoltaic as well as low energy solar photon harvesting. By matchingthe spectral response of those cells to that of the infrared solar spectrum, wereport a record high short circuit current (JSC) of 37 mA/cm2 under full solarspectrum and 5.5 mA/cm2 when placed at the back of a silicon wafer resulting inpower conversion efficiencies (PCE) of 6.4 % and 0.7 % respectively. Moreover,the device reached an above bandgap PCE of ~6 % as a thermo-photovoltaic cellrecorded under a 1000 {\deg}C blackbody radiator.

Solution Processed Infrared- and Thermo- Photovoltaics based on 0.7 eV Bandgap PbS Colloidal Quantum Dots