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The spin Hall effect (SHE) is an important spintronics phenomenon, whichallows transforming a charge current into a spin current and vice versa withoutthe use of magnetic materials or magnetic fields. To gain new insight into thephysics of the SHE and to identify materials with a substantial spin Hallconductivities (SHC), we performed high-precision, high-throughput ab initioelectronic structure calculations of the intrinsic SHC for over 20,000non-magnetic crystals. The calculations reveal a strong and unexpected relationof the magnitude of the SHC with the crystalline symmetry, which we show existsbecause large SHC is typically associated with mirror symmetry protected nodallines in the band structure. From the new developed database, we identify newpromising materials. This includes eleven materials with a SHC comparable oreven larger than that the up to now record Pt as well as materials withdifferent types of spin currents, which could allow for new types ofspin-obitronics devices.

Spin-orbitronic materials with record spin-charge conversion from high-throughput ab initio calculations