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GaN-based resonators supporting whispering gallery modes are suggested as apromising approach for fabrication of efficient nanophotonic applications. Amodification of excitonic emission due to coupling with cavity modes isobserved experimentally in the GaN planar hexagonal microcavities grown by aselective area metal-organic vapor phase epitaxy. Low temperaturecathodoluminescence spectra measured in-situ scanning electron microscope showtwo or three emission peaks split by 100 meV or 160 meV for the resonatorsformed by double- and single-wall micro-nuts, respectively. The results arecompared with numerical calculations of the cavity mode energies, theirQ-factors and the spatial distribution of the modes intensities. Although mostmodes are characterized by a small Purcell coefficient, there are a limitednumber of isolated cavity modes with a large Purcell factor. Such modes canefficiently interact with the bulk exciton in GaN. The results are alsoanalyzed by diagonalization of Hamiltanion describing the system of interactingexciton and cavity modes. Theoretically, it is shown that a strong couplingbetween the exciton and the cavity modes is possible in such micro-resonators.

Modification of Excitonic Emission in GaN Microcavities Formed by Planar Hexagonal Micro-Nuts Grown by Selective Area Epitaxy