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Non-polar (11-20) a-plane quantum dots (QDs) are strong candidates for both >200 K on-chip ultrafast polarized single-photon generation and theinvestigation of high temperature semiconductor QD photophysics. In this work,we report progress in the growth of a-plane InGaN QDs with aquasi-two-temperature method, which produces smooth epilayers and significantlyreduced carrier trapping sites in the proximity of the QDs. Opticalcharacterization has confirmed the ability of such QDs to emit polarized singlephotons and we have recorded a ~ 45% shorter average radiative lifetime and 65%reduction in the slow-timescale spectral diffusion compared to previous QDs.This growth method is an important development of the non-polar a-plane InGaNplatform, opening up more possibilities in single-photon, lasing, andfundamental investigations.

Reduction of radiative lifetime and slow-timescale spectral diffusion in InGaN polarized single-photon sources