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We have studied the effects of optical-frequency light on proximitizedInAs/Al Josephson junctions based on highly n-doped InAs nanowires at varyingincident photon flux and at three different photon wavelengths. Theexperimentally obtained IV curves were modeled using a shunted junction modelwhich takes scattering at the contact interfaces into account. The Josephsonjunctions were found to be surprisingly robust, interacting with the incidentradiation only through heating, whereas above the critical current our devicesshowed non-thermal effects resulting from photon exposure. Our work providesimportant guidelines for the co-integration of Josephson junctions alongsidequantum photonic circuits and lays the foundation for future work onnanowire-based hybrid photon detectors.

Proximitized Josephson junctions in highly-doped InAs nanowires robust to optical illumination