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The perturbation of a semiconductor from the thermodynamic equilibrium oftenleads to the display of nonlinear dynamics and formation of spatiotemporalpatterns due to the spontaneous generation of competing processes. Here, wedescribe the ultrafast imaging of nonlinear carrier transport in silicon,excited by an intense femtosecond laser pulse. We use scanning ultrafastelectron microscopy (SUEM) to show that, at a sufficiently high excitationfluence, the transport of photoexcited carriers slows down by turning into anoscillatory process. We attribute this nonlinear response to the electricfield, generated by the spatial separation of these carriers under intrinsicand photo-induced fields; we then provide an advection-diffusion model thatmimics the experimental observation. Our finding provides a direct imagingevidence for the electrostatic oscillation of hot carriers in highly excitedsemiconductors and offers new insights into their spatiotemporal evolution asthe equilibrium is recovered.

Carrier Density Oscillation in photoexcited Semiconductors