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We report a detailed study of the strong near-field Raman scatteringenhancement which takes place in tip-enhanced Raman scattering (TERS) in indiumnitride. In addition to the well-known first-order optical phonons of indiumnitride, near-field Raman modes, not detectable in the far-field, appear whenapproaching the plasmonic probe. The frequencies of these modes coincide withcalculated energies of second order combinational modes consisting of opticalzone center phonons and acoustic phonons at the edge of the Brillouin zone. Theappearance of strong combinational modes suggests that TERS in indium nitriderepresents a special case of Raman scattering in which a resonance condition onthe nanometer scale is achieved between the localized surface plasmons (LSPs)and surface plasmon polaritons (SPPs) of the probe with the surface chargeoscillation of the material. We suggest that the surface charge accumulation(SCA) in InN, which can render the surface a degenerate semiconductor, is thedominating reason for the unusually large enhancement of the TERS signal ascompared to other inorganic semiconductors. Thus, the plasmon-resonant TERS(PR-TERS) process in InN makes this technique an excellent tool for defectcharacterization of indium-rich semiconductor heterostructures andnanostructures with high carrier concentrations.

Strong near-field light-matter interaction in plasmon-resonant tip-enhanced Raman scattering in indium nitride