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Silicon bipolar impact ionization MOSFET offers the potential for realizationof leaky integrated fire (LIF) neuron due to the presence of parasitic BJT inthe floating body. In this work, we have proposed an L shaped gate bipolarimpact ionization MOS (L-BIMOS), with reduced breakdown voltage ($V_{B}$ = 1.68V) and demonstrated the functioning of LIF neuron based on positive feedbackmechanism of parasitic BJT. Using 2-D TCAD simulations, we manifest that theproposed L-BIMOS exhibits a low threshold voltage (0.2 V) for firing a spike,and the minimum energy required to fire a single spike for L-BIMOS iscalculated to be 0.18 pJ, which makes proposed device $194\times$ more energyefficient than PD-SOI MOSFET silicon neuron (MOSFET silicon neuron) and$5\times10^{3}$ times more energy efficient than analog/digital circuit basedconventional neuron. Furthermore, the proposed L-BIMOS silicon neuron exhibitsspiking frequency in the GHz range, when the drain is biased at $V_{DG}$ = 2.0V.

Ultra-Low Energy and High Speed LIF Neuron using Silicon Bipolar Impact Ionization MOSFET for Spiking Neural Networks