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We show in this paper that the technologically relevant field-like spin-orbittorque shows resilience against the geometrical effect of electronbackscattering. As device grows smaller in sizes, the effect of geometry onphysical properties like spin torque, and hence switching current could place aphysical limit on the continued shrinkage of such device -- a necessary trendof all memory devices (MRAM). The geometrical effect of curves has been shownto impact quantum transport and topological transition of Dirac and topologicalsystems. In our work, we have ruled out the potential threat of line-curvesdegrading the effectiveness of spin-orbit torque switching. In other words,spin-orbit torque switching will be resilient against the influence of curvesthat line the circumferences of defects in the events of electronbackscattering, which commonly happen in the channel of modern electronicdevices.

Resilience of the Spin-Orbit Torque against Geometrical Backscattering