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Ge-Sn alloys with a sufficiently high concentration of Sn is a direct bandgapgroup IV material. Recently, ion implantation followed by pulsed laser meltinghas been shown to be a promising method to realize this material due to itshigh reproducibility and precursor-free process. A Ge-Sn alloy with ~9 at.% Snwas shown to be feasible by this technique. However, the compressive strain,inherently occurring in heterogeneous epitaxy of the film, evidently delays thematerial from the direct bandgap transition. In this report, an attempt tosynthesize a highly-relaxed Ge-Sn alloy will be presented. The idea is toproduce a significantly thicker film with a higher implant energy and doses.X-ray reciprocal space mapping confirms that the material is largely-relaxed.The peak Sn concentration of the highest dose sample is 6 at.% as determined byRutherford backscattering spectrometry. Cross-sectional transmission electronmicroscopy shows unconventional defects in the film as the mechanism for thestrain relaxation. Finally, a photoluminescence (PL) study of thestrain-relaxed alloys shows photon emission at a wavelength of 2045 nm,suggesting an active incorporation of Sn concentration of ~6 at.%. The resultsof this study pave way to produce high quality relaxed GeSn alloy using anindustrially scalable method.

Synthesis of strain-relaxed Ge-Sn alloys using ion implantation and pulsed laser melting