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Whereas SnTe is a inverted band gap topological crystalline insulator, thetopological phase of the alloy Sn_{1-x}In_xTe, a topological superconductorcandidate, has not been clearly studied so far. Our calculations show that theSn_{1-x}In_xTe band gap reduces by increasing the In content, becoming a metalfor x>0.1. However, the band inversion at the fcc L point for both gapped andgapless phases has been maintained. Furthermore, the computed topologicalinvariant shows a non-trivial phase with a mirror Chern number n_M = -2 for Inconcentrations of x=0.03125, x=0.125, and x=0.25. We also identify pairs oftopologically protected states on the (001) surface of Sn_{1-x}In_xTe with +/-i mirror eigenvalues. The character of these topological states is affected byIn dopant. As the In content x increases, the Dirac crossing point movesfurther away from the L point, and the Fermi velocity of the topological statesincreases significantly. Our results demonstrate a non-trivial topologicalphase for the superconductor Sn_{1-x}In_xTe, and provide a detailed descriptionof the topological state properties.

Non-Trivial Topological Phase in the Sn_{1-x}In_xTe Superconductor