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We report on the demonstration of a deep sub-micron normally-off AlGaN/GaNHEMT with high on-current and high threshold voltage (VTH). Thehigh-performance device was realized by utilizing a gate recess with length anddepth of 200 nm and 124 nm respectively. The recess etched region had aroughness of 0.7 nm. Various recess etch depths and dielectric annealingconditions were used to tune the VTH. The optimized device exhibited on-currentand VTH of 500 mA/mm and 5 V respectively. The measured breakdowncharacteristics of the devices and their limitations were investigated using2D-TCAD device simulation. The penetration of the residual electric field inmost of the recess region could be the reason for the premature breakdown ofdeeply scaled recess-gate e-mode HEMTs.

Deep sub micron normally off AlGaN/GaN MOSFET on silicon with VTH > 5V and On Current > 0.5 A/mm