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Electron excitations at silicon and 3C-SiC surfaces caused by an intensefemtosecond laser pulse can be calculated by solving the time-dependent densityfunctional theory and the Maxwell's equation simultaneously. The energyabsorption, carrier density, and electron-hole quasi-temperatures decreaseexponentially in 100 nm from the surface. The electron and holequasi-temperatures have finite values even at large distances from the surfacebecause of a specific photo-absorption channel. Although the quasi-temperaturein the silicone shows smooth exponential descrease, 3C-SiC shows stepwisedecrease because of the change of concerning bands. The quasi-temperaturedepends not only on the excitation process, i.e., tunnel and multi-photonabsorption, but also on the band structure significantly.

Macroscopic electron-hole distribution in silicon and cubic silicon carbide