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Conduction and valence band-edge-property variations with position as well asdefects giving rise to localized states in the energy gap can play asignificant role in determining solar cell performance. Understanding theireffects on a device is necessary in interpreting complex experimentalobservations and in optimizing the performance of solar cells. In thisoverview, we include the effective forces arising from electron and holeband-edge-property variations with position in a numerical formulation of solarcell performance. Further we systematically catalogue and review a variety oflocalized states with different types and distributions, and include in ournumerical transport model the carrier trapping, electric field modification,and recombination caused by these localized states. The successfulimplementation of the numerical modeling of band-edge-property variations anddefect state effects is demonstrated using the methodology of the solar cellsimulation code Analysis of Microelectronic and Photonic Structures (AMPS) andits derivatives.

Addressing band-edge-property spatial variations and localized-state carrier trapping and recombination in solar cell numerical modeling