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[100]-tilt grain-boundary YBa2Cu3O7-x (YBCO) junctions are promising forinvestigation of macroscopic quantum phenomena in high-Tc Josephson junctions.However, fabrication of the [100]-tilt grain-boundary YBCO junctions with ahigh resistance, which are required to study quantum effects, is difficultbecause of a high transparency of a tunnel barrier in this type of junctions.Here, we demonstrate a modification of grain-boundary barrier properties with anew approach to an oxygen electromigration in the YBCO grain-boundary junctionswhen the oxygen diffuses under an applied electric field from thegrain-boundary to a BaTbO3 layer deposited atop of an YBCO film. Using thisapproach, we changed the normal-state resistance of the junctions from tens toseveral hundred Ohms without a degradation of their characteristic voltage IcRnand determined a barrier height and thickness by measuring the quasiparticletunnelling current.

High-resistance YBa2Cu3O7-x grain-boundary Josephson junctions fabricated by electromigration