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Formation of p+ contact on Germanium is important for applications in diodedetector and other electronic devices. In this work, thermally deposited Al onGe crystal is annealed at 350oC followed by slow cooling for solid-stateregrowth of Al-Ge p+ contact on Ge. Depth profile analysis by secondary ionmass spectrometry (SIMS) is carried out to investigate the occurrence of Al andGe along the depth of the regrown Al-Ge layer. Evidence of regrowth is observeddue to inter-diffusion of both Ge and Al across the layers although Gediffusion in Al layer is found to be more prevalent. Thickness of theevaporated Al layer is varied to understand the diffusion profile of Al, Ge andestimate the depth of Al incorporation in Ge crystal underneath. Hallmeasurement at different depth of Al-Ge regrown layer reveals that Al impurityinduces p+ doping in p-type Ge and its concentration gradually reduces towardsthe Ge crystal. Top surface of the Al-Ge layer exhibits lowest sheet resistancethat varies with the thickness of the as deposited Al layer.

Fabrication of p+ contact by thermally induced solid state regrowth of Al on p-type Ge crystal