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We report on the demonstration of the first axial AlInN ultravioletcore-shell nanowire light-emitting diodes with highly stable emission in the UVwavelength range. During the epitaxial growth of AlInN layer, an AlInN shell isspontaneously formed, resulted in the reduced nonradiative recombination onnanowire surface. The AlInN nanowires exhibit high internal quantum efficiencyof ~ 52% at room temperature for emission at 295nm. The peak emissionwavelength can be varied from 290 nm to 355 nm by changing the growthcondition. Moreover, significantly strong transverse magnetic (TM) polarizedemission is recorded which is ~ 4 times stronger compared to the transverseelectric (TE) polarized light at 295 nm. This study provides alternativeapproach for the fabrication of new type of high-performance ultravioletlight-emitters.

Epitaxial Growth and Characterization of AlInN Based Core-Shell Nanowire Light Emitting Diodes Operating in the Ultraviolet Spectrum