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The contact resistance limits the down-scaling and operating range of OFETs.With the monolayer (1L) organic crystals and non-destructivemetal/semiconductor interfaces, intrinsic mobility of 12.5 cm2V-1s-1 and Ohmiccontact resistance of 40 ohm-cm were achieved. The on/off ratio maintained at10^3 even at a small VDS of -0.1 mV. High current density of 4.2 uA/um wasachieved with the 1L-crystal as the active layer. At such high current density,the velocity saturation and channel self-heating effects are observed in OFETsfor the first time. In addition to the low contact resistance andhigh-resolution lithography, we suggest the thermal management of the highmobility OFETs will be the next major challenge to achieve high-speed denselyintegrated flexible electronics.

Realization of Ohmic-contact and velocity saturation in organic field-effect transistors by crystallized monolayer