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In this work, AlGaN/GaN HEMTs with dual-layer SiNx stressors (composed of alow-stress layer and a high-stress layer) were investigated. The low-stresspadding layer solved the surface damage problem caused during the deposition ofthe high-stress SiNx, and provided a good passivated interface. The HEMTs withdual-layer stressors showed a 1 V increase in the threshold voltage (Vth) withcomparable on-current and RF current gain to those without stressors. Moreover,the off-current (I_off) was shown to be reduced by one to three orders ofmagnitude in the strained devices as a result of the lower electric field inAlGaN, which suppressed the gate injection current. The dual-layer stressorscheme supports strain engineering as an effective approach in the pursuit ofthe normally-off operation of AlGaN/GaN HEMTs.

Threshold Voltage Improvement and Leakage Reduction of AlGaN/GaN HEMTs Using Dual-Layer SiNx Stressors