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High quality berylium doped InAs layer grown by MBE on GaAs substrate hasbeen examined via magnetotransport measurements and high resolutionquantitative mobility spectrum analysis in the range from 5 to 300 K and up to15 T magnetic field. The layer homogenity and dopant concentration has beenproofed via HR-SIMS. The results shew four channel conductivity and essentialsplitting of the most populated holelike channel below 55 K. The multilayermodel concluded from the QMSA results has been compared with nextnanosimulation.

Heavy-hole band splitting observed in mobility spectrum of p-type InAs grown on GaAs substrate