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We have analyzed spectral weight changes in the conduction and the valenceband across insulator to metal transition (IMT) in the VO2 thin film usingX-ray absorption spectroscopy (XAS) and resonant photoemission spectroscopy(PES). Through temperature dependent XAS and resonant PES measurements weunveil that spectral changes in the d$_{\|}$ states (V 3$\it{d_{x^2-y^2}}$orbitals) are directly associated with temperature dependent electricalconductivity. Due to presence of the strong electron-electron correlationsamong the d$_{\|}$ states, across IMT, these states are found to exhibitsignificant intensity variation compared to insignificant changes in the$\pi^{\ast}$ and the $\sigma^{\ast}$ states (which are O 2$\it{p}$ hybridized V3$\it{d}$ $e_g^{\pi}$ and $e_g^{\sigma}$ states) in the conduction band.Experimentally obtained values of the correlation parameter (U$_{dd}$ $\sim$5.1 eV, intra-atomic V 3$\it{d}$ correlations) and crystal field splitting (10Dq $\sim$ 2.5 eV) values are used to simulate the V $\it{L_{2,3}}$ edge XASspectra and an agreement between simulated and experimental spectra alsomanifests strong correlations. These results unravel that the IMT observed inthe VO2 thin film is the Mott-Hubbard insulator-metal transition.

Mott-Hubbard insulator-metal transition in the VO2 thin film: A combined XAS and resonant PES study