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We consider a problem of obtaining information about the scatteringpotentials of the monolayer graphene sample using available experimental dataon its resistance. We have in mind a development of the study describingsuper-high mobility electrons in suspended samples without chemical doping. Asfar as practical absence of the doping impurities in this case makes theCoulomb scattering negligible, we consider models of the short-range scatteringpotentials. The model of short-range potential is assumed to be supported bythe close vicinity of the ring or the circumference of a circle. The diameterof circles is supposed to be of the order of the crystal lattice spacing. Theempty core of the model potential guarantees the suppression of nonphysicalshortwave modes. Two models are investigated: the delta function on thecircumference of a circle (delta shell) and the annual well. An advantage ofthe former is simplicity, while a virtue of the latter is regularity. Weconsider scattering of electrons by these potentials and obtain exact explicitformulae for the scattering data. We here discuss application of these formulaefor calculation of observables. Namely, we analyze the contribution of thisscattering into the graphene resistance and plot the resistivity as a functionof the Fermi energy according to our theoretical formulae. The obtained resultsare consistent with experiment, where the resistance was measured as a functionof the Fermi momentum on the suspended annealed graphene. This fact gives apossibility to find parameters of the modeled potential on the base of theavailable experimental data on resistance of the suspended graphene sample withthe gate voltage controlled Fermi level position. It is clear to be veryimportant for applications.

Extraction of the short-range defect potential parameters from available experimental data on the graphene resistance