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Due to the unique three-dimensional (3-D) geometries of nanowire-i.e., largesurface-to-volume ratios and smaller cross-sections at the nanowire-substrateinterfaces-their carrier dynamics are much more complicated than those of thinfilms. Therefore, analytical solutions cannot be found for these nanostructuresand a more comprehensive scheme of 3-D modeling is necessary to interpret theirintrinsic carrier dynamics. To date, most modeling studies for nanowires havefocused on electromagnetic properties (e.g. optical modes and opticalabsorption). However, very few studies have combined optical and electricalsimulations together to probe the temporal and spatial carrier motions withinnanowires. In this work, we present a comprehensive nanowire optoelectronictransient model and photoresponse model, allowing us to investigate carrierlifetimes and their fundamental correlations with material properties, as wellas responsivities and detectivities for nanowire-based optical devices forphotodetection (i.e., photodetectors). We believe this work can stimulatefurther experimental and theoretical work and unveil the real strength of 3-Dcomputational models for exploring carrier dynamics in nanowires andnanostructured materials.

Comprehensive Three-dimensional Computational Model Enables Design of Nanostructured Infrared Detectors