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Recently, hexagonal boron nitride (hBN) layers have generated a lot ofinterest as ideal substrates for 2D stacked devices. Sapphire-supported thinhBN films of different thicknesses are grown using metalorganic vapour phaseepitaxy technique by following a flow modulation scheme. Though these films ofrelatively large size are potential candidates to be employed in designing realdevices, they exhibit wrinkling. The formation of wrinkles is a key signatureof strain distribution in a film. Raman imaging has been utilized to study theresidual strain distribution in these wrinkled hBN films. An increase in theoverall compressive strain in the films with an increase in the layer thicknesshas been observed. To find whether the residual lattice strain in the films canbe removed by a thermal treatment, temperature dependent Raman measurements ofthese films are carried out. The study demonstrates that the thermal rate ofstrain evolution is higher in the films of lower thickness than in the thickerfilms. This observation further provides a possible explanation for thevariation of strain in the as-grown films. An empirical relation has beenproposed for estimating the residual strain from the morphology of the films.We have also shown that the residual strain can be partially released by thedelamination of the films.

Strain distribution and thermal strain relaxation in MOVPE grown hBN films on sapphire substrates