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Due to the small size of nanoscale devices, they are highly prone to processdisturbances which results in manufacturing defects. Some of the defects arerandomly distributed throughout the nanodevice layer. Other disturbances tendto be local and lead to cluster defects caused by factors such as layermisintegration and line width variations. In this paper, we propose a methodfor identifying cluster defects from random ones. The motivation is to repairthe cluster defects using rectangular ranges in a range matchingcontent-addressable memory (RM-CAM) and random defects using triple-modularredundancy (TMR). It is believed a combination of these two approaches is moreeffective for repairing defects at high error rate with less resource. With theproposed fault repairing technique, defect recovery results are examined fordifferent fault distribution scenarios. Also the mapping circuit structurerequired for two conceptual 32*32 and 64*64 bit RAMs are presented and theirspeed, power and transistor count are reported.

A Range Matching CAM for Hierarchical Defect Tolerance Technique in NRAM Structures