English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Ferroelectric Rashba semiconductors (FERSC) have recently emerged as apromising class of spintronics materials. The peculiar coupling between spinand polar degrees of freedom responsible for several exceptional properties,including ferroelectric switching of Rashba spin texture, suggests that theelectron's spin could be controlled by using only electric fields. In thisregard, recent experimental studies revealing charge-to-spin interconversionphenomena in two prototypical FERSC, GeTe and SnTe, appear extremely relevant.Here, by employing density functional theory calculations, we investigate spinHall effect (SHE) in these materials and show that it can be large either inferroelectric or paraelectric structure. We further explore the compatibilitybetween doping required for the practical realization of SHE in semiconductorsand polar distortions which determine Rashba-related phenomena in FERSC, butwhich could be suppressed by free charge carriers. Based on the analysis of thelone pairs which drive ferroelectricity in these materials, we have found thatthe polar displacements in GeTe can be sustained up to a critical holeconcentration of over $\sim 10^{21}$/cm$^{3}$, while the tiny distortions inSnTe vanish at a minimal level of doping. Finally, we have estimated spin Hallangles for doped structures and demonstrated that the spin Hall effect could beindeed achieved in a polar phase. We believe that the confirmation of spin Halleffect, Rashba spin textures and ferroelectricity coexisting in one materialwill be helpful for design of novel multifunctional spintronics devicesoperating without magnetic fields.

Spin Hall effect in prototype Rashba ferroelectrics GeTe and SnTe