English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Evolution of a stripe array of polarization domains triggered by the oxygenvacancy migration in an acceptor doped ferroelectric is investigated in aself-consistent manner. A comprehensive model based on theLandau-Ginzburg-Devonshire approach includes semiconductor features due to thepresence of electrons and holes, and effects of electrostriction andflexoelectricity especially significant near the free surface and domain walls.A domain array spontaneously formed in the absence of an external field isshown to undergo a reconstruction in the course of the gradual oxygen vacancymigration driven by the depolarization fields. The charge defect accumulationnear the free ferroelectric surface causes a series of phenomena: (i) symmetrybreaking between the positive and negative c-domains, (ii) appearance of aneffective dipole layer at the free surface followed by the formation of asurface electrostatic potential, (iii) tilting and recharging of the domainwalls, especially pronounced at higher acceptor concentrations. An internalbias field determined by the gain in the free energy of the structure exhibitsdependences of its amplitude on time and dopant concentration well comparablewith available experimental results on aging in BaTiO3.

Hierarchy of Domain Reconstruction Processes due to Charged Defect Migration in Acceptor Doped Ferroelectrics