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In this work, we will present a physical model and measurements of thetransport of small charge packets in the bulk of thick high resistivity CCDbefore being collected by the pixel potential wells. A new technique to measurethe lateral spread of the charge as a function of the ionization depth in thebulk is presented. Results from measurements on CCD currently in use forseveral scientific instruments are shown and validated with a new mathematicalalgorithm to extend the current modeling based only on the diffusion of thecharge in silicon.

Studies on small charge packet transport in high-resistivity fully-depleted CCDs